We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{ %}$) due to lattice mismatch. The thin films have a $\omega$ full width half max of $7.7^{ ''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{ nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a N\'eel temperature of $62~\text{ K}$, a Curie-Weiss temperature of $-65~\text{ K}$ and an effective moment of $5.9~\mu_{ \text{ B}}/\text{ f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{ K}$ of $35~\mu\Omega\cdot \text{ cm}$.
Categories: cond-mat.mtrl-sci