We theoretically analyse D.C. resistivity($\rho$) in the Kondo-lattice model using the powerful memory function approach. The complete temperature evolution of $\rho$ is investigated using the W\"{ o}lfle-G\"{ o}tze expansion of the memory function. The resistivity in this model originates due to spin-flip magnetic scattering of conduction $s$-electron off the quasi-localized $d$ or $f$ electron spins. We find the famous resistivity upturn at lower temperature regime ($k_B T<<\mu_d$), where $\mu_d$ is the effective chemical potential of $d$-electrons. In the high temperature regime $(\mu_d<<k_B T)$ we discover that $\rho \propto T^{ \frac{ 3}{ 2}}$. The worked out theory is quantitatively compared with experimental data and reasonably good agreement is found.
Categories: cond-mat.str-el cond-mat.supr-con