In this study, we investigated the gate voltage dependence of $T_{ \mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{ \mathrm c}^{ \mathrm { zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{ \mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{ \mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{ \mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.
Categories: cond-mat.supr-con