This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{ 2}{ MGy} (Si) at \SI{ 160}{ keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $\beta$-particles ($^{ 90}$Sr). After \SI{ 2}{ MGy} irradiation, the reverse leakage current remains at an ultralow level of $\sim 10^{ -11}$ \si{ A/cm^2} at \SI{ -300}{ V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \SI{ ~130}{ V}. CCE for $\beta$-particles decreases by less than 5\%. The detector maintains good timing resolution: \SI{ 21}{ ps} before and \SI{ 31}{ ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring.
Categories: physics.ins-det