We report on $\vec{ k}\cdot\vec{ p}$ calculations of Rashba spin-orbit coupling controlled by external gates in InAs/InAsP core-shell nanowires. We show that charge spilling in the barrier material allows for a stronger symmetry breaking than in homoegenous nano-materials, inducing a specific interface-related contribution to spin-orbit coupling. Our results qualitatively agree with recent experiments [S. Futhemeier \textit{ et al.}, Nat. Commun. \textbf{ 7}, 12413 (2016)] and suggest additional wavefunction engineering strategies to enhance and control spin-orbit coupling.
Categories: cond-mat.mes-hall