Accurate measurements of the cross-plane thermal conductivity { \Lambda}_cross of a high-thermal-conductivity thin film on a low-thermal-conductivity ({ \Lambda}_s) substrate (e.g., { \Lambda}_cross/{ \Lambda}_s>20) are challenging, due to the low thermal resistance of the thin film compared to that of the substrate. In principle, { \Lambda}_cross could be measured by time-domain thermoreflectance (TDTR), using a high modulation frequency f_h and a large laser spot size. However, with one TDTR measurement at f_h, the uncertainty of the TDTR measurement is usually high due to low sensitivity of TDTR signals to { \Lambda}_cross and high sensitivity to the thickness h_Al of Al transducer deposited on the sample for TDTR measurements. We observe that in most TDTR measurements, the sensitivity to h_Al only depends weakly on the modulation frequency f. Thus, we performed an additional TDTR measurement at a low modulation frequency f_0, such that the sensitivity to h_Al is comparable but the sensitivity to { \Lambda}cross is near zero. We then analyze the ratio of the TDTR signals at f_h to that at f_0, and thus significantly improve the accuracy of our { \Lambda}cross measurements. As a demonstration of the dual-frequency approach, we measured the cross-plane thermal conductivity of a 400-nm-thick nickel-iron alloy film and a 3-{ \mu}m-thick Cu film, both with an accuracy of ~10%. The dual-frequency TDTR approach is useful for future studies of thin films.
Categories: cond-mat.mtrl-sci