We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $\mu{ V}/ \sqrt{ Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{ -5}$ e/$\sqrt{ Hz}$.
Categories: cond-mat.mes-hall