Carrier transition is one of the major factors hindering the high-speed implementation of the M{ \o}lmer-S{ \o}rensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for the M{ \o}lmer-S{ \o}rensen gate in ion chains which accounts for the effect of carrier transition on qubit-phonon dynamics. We show that the fast-oscillating carrier term effectively modifies the spin-dependent forces acting on ions, and this can be compensated by a simple nonlinear transformation of a laser pulse. Using numerical simulations for short ion chains and perturbation theory for longer chains up to $20$ ions, we demonstrate that our approach allows to reach the infidelity below $10^{ -4}$ while keeping the gate duration of the order of tens of microseconds.
Categories: quant-ph