Linear polarization angle, $\theta$, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, $R_{ xx}$, in high mobility GaAs/AlGaAs 2D electron devices have shown a $\theta$ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, $\theta_{ 0}$. Here, we suggest a microwave frequency dependence of $\theta_{ 0} (f)$ using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.
Categories: cond-mat.mes-hall